PART |
Description |
Maker |
MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
VG36128161BT VG36128401BT VG36128801BT |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
VG36646141BT-10 VG36641641BT |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
VG36128401BT VG36128161BT VG36128801BT |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semi...
|
MB85317A-60 |
CMOS 4M?72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M?72浣?????ㄦ?RAM)
|
Fujitsu Limited
|
MB81117422A-125 |
CMOS 2×2M ×4 Bit
Synchronous Dynamic RAM(CMOS 2×2M ×4 位同步动态RAM)
|
Fujitsu Limited
|
VG3617161DT VG3617161DT-6 VG3617161DT-7 VG3617161D |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semi...
|
VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
MB811171622A-125 |
CMOS 2×512K×16 Bit
Synchronous Dynamic RAM(CMOS 2×512K×16 位同步动态RAM)
|
Fujitsu Limited
|
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MK31VT864A-8YC |
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字64位同步动态RAM模块) 8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字4位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
MK32VT864-10YE |
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字64位同步动态RAM模块) 8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字4位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|